advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 80v lower on-resistance r ds(on) 13m fast switching characteristic i d 75a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ e as single pulse avalanche energy 3 mj i ar avalanche current a t stg t j symbol value units rthj-c thermal resistance junction-case max. 0.9 /w rthj-a thermal resistance junction-ambient max. 62 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 138 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 1.11 continuous drain current, v gs @ 10v 48 pulsed drain current 1 260 gate-source voltage 20 continuous drain current, v gs @ 10v 75 parameter rating drain-source voltage 80 200912072-1/4 AP85T08GS/p rohs-compliant product 450 30 g d s the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-263 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap85t08gp) are available for low-profile applications. g d s to-263(s) g d s to-220(p)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 80 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =45a - - 13 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =45a - 70 - s i dss drain-source leakage current (t j =25 o c) v ds =80v, v gs =0v - - 10 ua drain-source leakage current (t j =150 o c) v ds =64v ,v gs =0v - - 100 ua i gss gate-source leakage v gs = 20v - - 100 na q g total gate charge 2 i d =45a - 63 100 nc q gs gate-source charge v ds =64v - 23 - nc q gd gate-drain ("miller") charge v gs =4.5v - 38 - nc t d(on) turn-on delay time 2 v ds =40v - 30 - ns t r rise time i d =45a - 100 - ns t d(off) turn-off delay time r g =10 ? v gs =10v - 144 - ns t f fall time r d =0.89 - 173 - ns c iss input capacitance v gs =0v - 6300 10080 pf c oss output capacitance v ds =25v - 670 - pf c rss reverse transfer capacitance f=1.0mhz - 350 - pf r g gate resistance f=1.0mhz - 1.1 1.7 ?
AP85T08GS/ p fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 0 50 100 150 200 250 036912 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =3.0v 10v 7.0 v 5.0v 4.5v 0 30 60 90 120 036912 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c v g =3.0v 10v 7.0 v 5.0v 4.5v 10 11 12 13 14 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =20a t c =25 o c 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =45a v g =10v 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4/4 AP85T08GS/p q v g 4.5v q gs q gd q g charge 100 1000 10000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0 40 80 120 02468 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0 2 4 6 8 10 12 0 20406080100 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =40v v ds =50v v ds =64v i d =45a
package outline : to-263 millimeters min nom max a 4.25 4.75 5.20 a1 0.00 0.15 0.30 a2 2.20 2.45 2.70 b 0.70 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.45 0.60 c1 1.15 1.30 1.45 d 8.30 8.90 9.40 e 9.70 10.10 10.50 e 2.04 2.54 3.04 l2 ----- 1.50 ----- l3 4.50 4.90 5.30 l4 ----- 1.50 ---- 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-263 symbols advanced power electronics corp. package code part numbe r e b b1 e d l2 l3 c1 a a1 l4 c xxxxxs ywwsss a2 y last digit of the year ww week sss sequence package code part numbe r 85t08gs ywwsss logo e b b1 e d l2 l3 c1 a a1 l4 c a2 date code (ywwsss) y last digit of the year ww week sss sequence meet rohs requirement
package outline : to-220 millimeters min nom max a 4.25 4.48 4.70 b 0.65 0.80 0.90 b1 1.15 1.38 1.60 c 0.40 0.50 0.60 c1 1.00 1.20 1.40 e 9.70 10.00 10.40 e1 --- --- 11.50 e ---- 2.54 ---- l 12.70 13.60 14.50 l1 2.60 2.80 3.00 l2 1.00 1.40 1.80 l3 2.6 3.10 3.6 l4 14.70 15.50 16 l5 6.30 6.50 6.70 meet rohs requirement
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